Title : Mosfets with bi-directional switching capability: A key enabler for the future of power electronics
Abstract:
The increasing demand for efficient and compact on-board chargers in electric vehicles necessitates the development of high-performance power electronic topologies.
Silicon-Carbide (SiC) based bi-directional MOSFETs have emerged as a promising solution, offering outstanding performance and enabling the implementation of advanced topologies such as the matrix converter. This paper presents an investigation into the performance of SiC bi-directional MOSFETs, focusing on their suitability for high-power applications.
We plan to thoroughly characterize the devices' electrical and thermal behaviour, including switching losses, conduction losses, and thermal management. The results will provide valuable insights into the potential of SiC bi-directional MOSFETs to enhance the efficiency, power density, and reliability of on-board chargers.
Furthermore, we will explore the benefits of integrating these devices into matrix converter topologies, which offer improved flexibility, reduced component count, and increased fault tolerance. By pushing the boundaries of SiC bi-directional MOSFET technology, this research aims to contribute to the development of more efficient, compact, and sustainable power electronic systems, ultimately supporting the widespread adoption of electric vehicles and the reduction of greenhouse gas emissions. In addition, we will conduct a comprehensive comparison with state-of-the-art solutions, including Gallium-Nitride (GaN) based bi-directional semiconductors, to assess the relative merits of each technology and identify areas for further improvement. This comparative analysis will provide a detailed understanding of the trade-offs between SiC and GaN devices, enabling informed design choices and accelerating the development of next-generation power electronic systems.
